Effect of Emitter Ledge Thickness on InGaP/GaAs Heterojunction Bipolar Transistors

被引：3
|
作者：
Chen, Tzu-Pin [1 ]
Lee, Chi-Jhung [1 ]
Cheng, Shiou-Ying [2 ]
Lour, Wen-Shiung [3 ]
Tsai, Jung-Hui [4 ]
Guo, Der-Feng [5 ]
Ku, Ghun-Wei [1 ]
Liu, Wen-Chau [1 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan
[2] Nation Ilan Univ, Dept Elect Engn, Ilan 26041, Taiwan
[3] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 20224, Taiwan
[4] Natl Kaohsiung Normal Technol, Dept Elect Engn, Yanchao Township 82444, Kaohsiung Cty, Taiwan
[5] Chinese AF Acad, Dept Elect Engn, Kangsun, Kaohsiung Cty, Taiwan
来源：
ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 02期
关键词：
gallium arsenide; gallium compounds; heterojunction bipolar transistors; III-V semiconductors; indium compounds; semiconductor device reliability; thermal stability; PASSIVATION; SURFACE; BASE; HBTS;
D O I：
10.1149/1.3042272
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
The temperature-dependent characteristics of InGaP/GaAs heterojunction bipolar transistors with different emitter ledge thickness (t) are studied and demonstrated. From experimental results, devices d(3) (t=100 A) and d(4) (t=200 A) show the highest current gains, lowest base current, and base current ideality factors. Devices d(3) and d(4) also exhibit an improved thermal stability on dc current-voltage characteristics. Moreover, device d(4) shows the best reliability performance after a 200 h stress test. Therefore, the data support that the optimum emitter ledge thickness is between 100 and 200 A.
引用
收藏
页码：H41 / H43
页数：3
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