InGaP/GaAs carbon-doped heterostructures for heterojunction bipolar transistors

被引：0
|
作者：
Hartmann, QJ [1 ]
Ahmari, DA [1 ]
Yang, Q [1 ]
Curtis, AP [1 ]
Stillman, GE [1 ]
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA
来源：
HETEROSTRUCTURE EPITAXY AND DEVICES: HEAD '97 | 1998年 / 48卷
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：155 / 160
页数：6
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