Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

被引：2
|
作者：
Wu, Yi-Chen [1 ]
Tsai, Jung-Hui [2 ]
Chiang, Te-Kuang [1 ]
Wang, Fu-Min [1 ]
机构：
[1] Natl Univ Kaohsiung, Dept Elect Engn, Kaohsiung 811, Taiwan
[2] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan
来源：
SEMICONDUCTORS | 2015年 / 49卷 / 10期
关键词：
MOLECULAR-BEAM EPITAXY; PERFORMANCE;
D O I：
10.1134/S1063782615100279
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
In this article the characteristics of In0.49Ga0.51P/GaAs/GaAs0.975Bi0.025 and In0.49Ga0.51P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B-E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B-E turn-on voltage to decrease for low input power applications. However, the current gain is slightly smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.
引用
收藏
页码：1361 / 1364
页数：4
相关论文
共 50 条
  • [31] Numerical simulation of self-heating InGaP/GaAs heterojunction bipolar transistors
    Li, YM
    Huang, KY
    [J]. COMPUTATIONAL SCIENCE - ICCS 2005, PT 3, 2005, 3516 : 292 - 299
  • [32] Temperature dependence of current gain of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
    Tang, WB
    Hsu, HT
    Fan, CC
    Wang, CH
    Li, NY
    Hsin, YM
    [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (09): : 2190 - 2193
  • [33] Comparisons between InGaP/GaAs heterojunction bipolar transistors with a sulfur- and an InGaP-passivated base surface
    Tan, SW
    Chen, HR
    Chu, MY
    Chen, WT
    Lin, AH
    Hsu, MK
    Lin, TS
    Lour, WS
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2005, 37 (06) : 401 - 409
  • [34] Investigation of InGaP/GaAs heterojunction bipolar transistor with doping graded base
    Chen, YW
    Hsu, WC
    Hsu, RT
    Wu, YH
    Chen, YJ
    Lin, YS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06): : 2555 - 2557
  • [35] Investigation of an InGaP/GaAs resonant-tunneling heterojunction bipolar transistor
    Pan, HJ
    Feng, SC
    Wang, WC
    Lin, KW
    Yu, KH
    Wu, CZ
    Laih, LW
    Liu, WC
    [J]. SOLID-STATE ELECTRONICS, 2001, 45 (03) : 489 - 494
  • [36] InGaP heterojunction bipolar transistors
    Pan, N
    Welser, RE
    Lutz, CR
    Elliot, J
    Vu, DP
    [J]. COMPOUND SEMICONDUCTOR POWER TRANSISTORS AND STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXIX), 1998, 98 (12): : 71 - 81
  • [37] The effect of n-GaAs carrier concentration on current gain in InGaP/GaAs heterojunction bipolar transistors
    Yamada, Hisashi
    Fukuhara, Noboru
    Hata, Masahiko
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5122 - 5124
  • [38] An enhanced model for InGaP/GaAs heterojunction bipolar transistor
    Shi, Yuxia
    Wang, Yan
    [J]. MICROELECTRONICS JOURNAL, 2013, 44 (02) : 163 - 168
  • [39] Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors
    Hsin, YM
    Hsu, HT
    Hseuh, KP
    Tang, WB
    Fan, CC
    Wang, CH
    Chen, CW
    Li, NY
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 2003, 32 (09) : 948 - 951
  • [40] Comprehensive studies of InGaP/GaAs heterojunction bipolar transistors with different thickness of setback layers
    Cheng, SY
    Chen, CY
    Chen, JY
    Liu, WC
    Chang, WL
    Chiang, MH
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2005, 37 (03) : 171 - 183
12345