Effects of annealing on the hydrogen concentration and the performance of InGaP/InGaAsN/GaAs heterojunction bipolar transistors

被引：0
|
作者：
Hsin, YM [1 ]
Hsu, HT
Hseuh, KP
Tang, WB
Fan, CC
Wang, CH
Chen, CW
Li, NY
机构：
[1] Natl Cent Univ, Dept Elect Engn, Chungli 320, Taiwan
[2] EMCORE Corp, Photovolta Div, Albuquerque, NM 87123 USA
来源：
JOURNAL OF ELECTRONIC MATERIALS | 2003年 / 32卷 / 09期
关键词：
heterojunction bipolar transistor; InGaAsN;
D O I：
10.1007/s11664-003-0228-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of rapid thermal annealing (RTA) on InGaP/InGaAsN heterojunction bipolar transistors (HBTs) with a carbon-doped base have been studied. The hydrogen and nitrogen concentrations in the base, as well as the direct current (DC) and radio frequency (RF) device performance, were studied as a function of the annealing temperature. A 30-sec anneal at 650degreesC and 700degreesC under N(2) ambient effectively eliminates hydrogen from the base. As the annealing temperature is increased, the base sheet resistance decreases, and the corresponding maximum frequency of oscillation increases. For all annealing temperatures studied, we found degradation in the DC gain, presumably caused by the increase of nitrogen concentration in the base region.
引用
收藏
页码：948 / 951
页数：4
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