Simulation of GaN/AlGaN heterojunction bipolar transistors: part II - pnp structures

被引：7
|
作者：
Cao, XA
Van Hove, JM
Klaassen, JJ
Polley, CJ
Wowchak, AM
Chow, PP
King, DJ
Zhang, AP
Dang, G
Monier, C
Pearton, SJ
Ren, F [1 ]
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] SVT Associates, Eden Prairie, MN 55344 USA
来源：
SOLID-STATE ELECTRONICS | 2000年 / 44卷 / 07期
基金：
美国国家科学基金会;
关键词：
D O I：
10.1016/S0038-1101(00)00026-5
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The de characteristics of pnp GaN/AlGaN heterojunction bipolar transistors are simulated using a quasi-3D-model. The effects of base doping and thickness, contact geometry and device operating temperature on de current gain have been examined. Maximum gains of similar to 50 are expected for high quality materials and an optimized layer design. For similar layer thicknesses, npn devices have higher gains than the pnp structures, but the latter does not suffer from a high base sheet resistance. (C) 2000 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：1261 / 1265
页数：5
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