Effect of threading dislocations on AlGaN/GaN heterojunction bipolar transistors

被引：38
|
作者：
McCarthy, L [1 ]
Smorchkova, I
Xing, H
Fini, P
Keller, S
Speck, J
DenBaars, SP
Rodwell, MJW
Mishra, UK
机构：
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat Sci, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 15期
关键词：
D O I：
10.1063/1.1358358
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate an AlGaN/GaN heterojunction bipolar transistor on a substrate grown using the lateral epitaxial overgrowth (LEO) technique. Common emitter characteristics show a current gain of 3. Active layers were grown by plasma-assisted molecular-beam epitaxy on metal-organic chemical-vapor-deposition-grown templates on sapphire. The collector-emitter leakage mechanism in these devices is found to be local punch-through associated with base layer compensation near the dislocations. LEO wing regions (nondislocated) were found to reduce the emitter-collector leakage by four orders of magnitude over adjacent window regions which had a dislocation density of 10(8) cm(-2). Varying the doping profile through the base confirms that the mechanism for leakage is local punch-through due to compensation. This compensation mechanism is consistent with simulations which assume a donor-state line density of 10(7) cm(-1). The implications of the emitter-collector leakage for dc device characterization are also discussed. (C) 2001 American Institute of Physics.
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收藏
页码：2235 / 2237
页数：3
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