Graded-emitter AlGaN/GaN heterojunction bipolar transistors

被引：23
|
作者：
Huang, JJ
Hattendorf, M
Feng, M
Lambert, DJH
Shelton, BS
Wong, MM
Chowdhury, U
Zhu, TG
Kwon, HK
Dupuis, RD
机构：
[1] Univ Illinois, Dept Elect & Comp Engn, Ctr Cpds Semicond Microelect, Urbana, IL 61801 USA
[2] Univ Texas, Microelect Res Ctr, Austin, TX 78712 USA
来源：
ELECTRONICS LETTERS | 2000年 / 36卷 / 14期
关键词：
D O I：
10.1049/el:20000887
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
AlGaN/GaN heterojunction bipolar transistors (HBTs) with a graded emitter-base junction have been grown and fabricated. The epitaxial structures were grown by metalorganic chemical vapor deposition on (0001) sapphire substrates. The HBT devices with an emitter size of 60 x 60 mu m(2) exhibit well controlled current-voltage characteristics and Gummel plots and achieve a common-emitter current gain in the range beta = 4 - 10 and a common-emitter offset voltage V-CEoff = 4V at room temperature.
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收藏
页码：1239 / 1240
页数：2
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