Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

被引：24
|
作者：
Zhang, AP [1 ]
Dang, GT
Ren, F
Han, J
Baca, AG
Shul, RJ
Cho, H
Monier, C
Cao, XA
Abernathy, CR
Pearton, SJ
机构：
[1] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
[3] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
来源：
APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 20期
关键词：
D O I：
10.1063/1.126524
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 degrees C. In the common-base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of similar to 50 kW cm(-2). The dc current gain was in the range 20-25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. (C) 2000 American Institute of Physics. [S0003-6951(00)00920-7].
引用
收藏
页码：2943 / 2945
页数：3
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