Trap-assisted tunnelling current in MIM structures

被引：11
|
作者：
Racko, Juraj [1 ]
Mikolasek, Miroslav [1 ]
Granzner, Ralf [2 ]
Breza, Juraj [1 ]
Donoval, Daniel [1 ]
Grmanova, Alena [1 ]
Harmatha, Ladislav [1 ]
Schwierz, Frank [2 ]
Froehlich, Karol [3 ]
机构：
[1] Slovak Tech Univ Bratislava, Bratislava 81219, Slovakia
[2] Tech Univ Ilmenau, D-98684 Ilmenau, Germany
[3] Slovak Acad Sci, Bratislava 84104, Slovakia
来源：
CENTRAL EUROPEAN JOURNAL OF PHYSICS | 2011年 / 9卷 / 01期
关键词：
MIM; I-V characteristics; trap-assisted tunnelling; high-permittivity dielectrics; REVERSE GATE LEAKAGE; MODEL; MECHANISM; SCHOTTKY; SILICON; FILMS;
D O I：
10.2478/s11534-010-0027-7
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new model is presented of current transport in Metal Insulator Metal (MIM) structures by quantum mechanical tunnelling. In addition to direct tunnelling through an insulating layer, tunnelling via defects present in the insulating layer plays an important role. Examples of the influence of the material and thickness of the insulating layer, energy distribution of traps, and metal work functions are also provided.
引用
收藏
页码：230 / 241
页数：12
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