Influence of trap-assisted tunneling on trap-assisted tunneling current in double gate tunnel field-effect transistor

被引：11
|
作者：
Jiang, Zhi [1 ]
Zhuang, Yi-Qi [1 ]
Li, Cong [1 ]
Wang, Ping [1 ]
Liu, Yu-Qi [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
CHINESE PHYSICS B | 2016年 / 25卷 / 02期
基金：
中国国家自然科学基金;
关键词：
trap-assisted tunneling (TAT); tunnel field-effect transistors (TFETs); optical phonon scattering (OP); acoustic phonon scattering (AP); FET;
D O I：
10.1088/1674-1056/25/2/027701
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Trap-assisted tunneling (TAT) has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor (TFET). In this paper, we assess subthreshold performance of double gate TFET (DG-TFET) through a band-to-band tunneling (BTBT) model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile (D-it) and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
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页数：5
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