Understanding of Trap-Assisted Tunneling current - assisted by oxygen vacancies in RuOx/SrTiO3/TiN MIM capacitor for the DRAM Application

被引：0

作者：

Kim, M. -S. ^{[1
]}

Kaczer, B. ^{[1
]}

Starschich, S. ^{[1
]}

Popovici, M. ^{[1
]}

Swerts, J. ^{[1
]}

Richard, O. ^{[1
]}

Tomida, K. ^{[1
]}

Vrancken, C. ^{[1
]}

Van Elshocht, S. ^{[1
]}

Debusschere, I. ^{[1
]}

Altimime, L. ^{[1
]}

Kittl, J. A. ^{[1
]}

机构：

[1] IMEC, B-3001 Louvain, Belgium

来源：

2012 4TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW) | 2012年

关键词：

component; DRAM MIM capacitor; high-k dielectrics; STO; TiN; Ru; RuOx; SCL current; oxygen vacancies; trap-assisted-tunneling current; NM;

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

A transient leakage current was measured as a function of time for thin (similar to 9 nm) strontium titanate (STO) capacitor dielectrics with RuOx as a bottom electrode and TiN as a top electrode at different temperatures under constant direct current (DC) bias stress. With the space-charge-limited (SCL) current theory, the mobility of oxygen vacancies (V-O) and the activation energy (E-0) of V-O were extracted. By closely examining the time-zero current-voltage (I-V) curves for a positively and a negatively held DC bias conditions before and after the stresses, an understanding of trap-assisted-tunneling (TAT) current, initiated by oxygen vacancies (V-O) is presented. Based on this understanding, a way to further reduce the leakage current for a sub-10 nm dielectric film is provided.

引用

页数：4

共 7 条

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