A NEW MODEL OF MULTIPHONON EXCITATION TRAP-ASSISTED BAND-TO-BAND TUNNELLING

被引：0
|
作者：
Racko, Juraj [1 ]
Mikolasek, Miroslav [1 ]
Grmanova, Alena [1 ]
Breza, Juraj [1 ]
Benko, Peter [1 ]
Gallo, Ondrej [1 ]
Harmatha, Ladislav [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Ilkovicova 3, Bratislava 81219, Slovakia
来源：
ELECTRONIC DEVICES AND SYSTEMS: IMAPS CS INTERNATIONAL CONFERENCE 2011 | 2011年
关键词：
Trap-assisted tunnelling;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The paper describes a new approach to calculating the currents in a pn-diode based on the extension of the Shockley-Read-Hall recombination-generation model. The presented theory is an alternative to Schenk's model of trap-assisted tunnelling.
引用
收藏
页码：168 / 173
页数：6
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