Deriving the exchange times for a model of trap-assisted tunnelling

被引：1
|
作者：
Racko, Juraj [1 ]
Mikolasek, Miroslav [1 ]
Kadlecikova, Magdalena [1 ]
Benko, Peter [1 ]
Chvala, Ales [1 ]
机构：
[1] Slovak Univ Technol Bratislava, Ilkovicova 3, Bratislava 81219, Slovakia
来源：
JOURNAL OF ELECTRICAL ENGINEERING-ELEKTROTECHNICKY CASOPIS | 2020年 / 71卷 / 01期
关键词：
trap-assisted tunnelling; capture and emission probability; exchange times; INDUCED LEAKAGE CURRENT; TEMPERATURE-DEPENDENCE; SILC; ELECTRON; OXIDES; MECHANISM; MEMORIES; FIELD; READ;
D O I：
10.2478/jee-2020-0004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The work presents a physical model of trap-assisted tunnelling that allows assessing the impact of traps upon the total current through metal/semiconductor heterostructures. The model is based on expressing the occupation probability of the trapping centres by electrons in terms of thermal and tunnelling capture and emission times, commonly referred to as exchange times. The occupation probabilities calculated in this way are then used to evaluate the generation-recombination rates occurring in the continuity equations.
引用
收藏
页码：31 / 36
页数：6
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