Trap-assisted tunnelling in ion-implanted n-Si/SiO2 structures

被引：7
|
作者：
Gushterov, A [1 ]
Simeonov, S [1 ]
机构：
[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
VACUUM | 2004年 / 76卷 / 2-3期
关键词：
trap-assisted tunnelling; hydrogen implantation; deep levels; oxide charge;
D O I：
10.1016/j.vacuum.2004.07.037
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Trap-assisted tunnelling in hydrogen ion beam implanted n-Si/SiO2 structures has been investigated. This hydrogen implantation generates positive fixed oxide charges and interface traps in the structures. Deep levels in the Si substrate have been detected. The conditions for appearance of trap-assisted tunnelling after H+ implantation are given. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：315 / 318
页数：4
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