Trap-assisted tunneling in p-Si/SiO2 structures

被引：4
|
作者：
Simeonov, S [1 ]
Gushterov, A [1 ]
Kafedjiiska, E [1 ]
Szekeres, A [1 ]
机构：
[1] Inst Solid State Phys, BU-1784 Sofia, Bulgaria
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期
关键词：
D O I：
10.1023/A:1026165523419
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Conduction in p-Si/SiO2 structures in which a 65.3-nm SiO2 layer has been subjected to hydrogen-plasma treatment at 20 degreesC does not depend on temperature in the range 77-300 K, in the accumulation regime under an electric field of 0.7-4.5 x 10(6) V cm(-1) in the SiO2 layer. A trap-assisted tunneling mechanism in the SiO2 layer has been proposed as an explanation for this tunneling-type conduction in the p-Si/SiO2 structures. (C) 2003 Kluwer Academic Publishers.
引用
收藏
页码：801 / 802
页数：2
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