Trap-assisted tunneling in p-Si/SiO2 structures

被引：4

作者：

Simeonov, S ^{[1
]}

Gushterov, A ^{[1
]}

Kafedjiiska, E ^{[1
]}

Szekeres, A ^{[1
]}

机构：

[1] Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

D O I：

10.1023/A:1026165523419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conduction in p-Si/SiO2 structures in which a 65.3-nm SiO2 layer has been subjected to hydrogen-plasma treatment at 20 degreesC does not depend on temperature in the range 77-300 K, in the accumulation regime under an electric field of 0.7-4.5 x 10(6) V cm(-1) in the SiO2 layer. A trap-assisted tunneling mechanism in the SiO2 layer has been proposed as an explanation for this tunneling-type conduction in the p-Si/SiO2 structures. (C) 2003 Kluwer Academic Publishers.

引用

页码：801 / 802

页数：2

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