Trap-assisted tunneling in p-Si/SiO2 structures

被引：4

作者：

Simeonov, S ^{[1
]}

Gushterov, A ^{[1
]}

Kafedjiiska, E ^{[1
]}

Szekeres, A ^{[1
]}

机构：

[1] Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2003年 / 14卷 / 10-12期

关键词：

D O I：

10.1023/A:1026165523419

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Conduction in p-Si/SiO2 structures in which a 65.3-nm SiO2 layer has been subjected to hydrogen-plasma treatment at 20 degreesC does not depend on temperature in the range 77-300 K, in the accumulation regime under an electric field of 0.7-4.5 x 10(6) V cm(-1) in the SiO2 layer. A trap-assisted tunneling mechanism in the SiO2 layer has been proposed as an explanation for this tunneling-type conduction in the p-Si/SiO2 structures. (C) 2003 Kluwer Academic Publishers.

引用

页码：801 / 802

页数：2

共 50 条

[31] Electron tunneling through SiO2/Si structures in scanning tunneling microscopy
Iwasaki, H
Gotoh, M
Sudoh, K
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2001, 40 (08): : 5116 - 5120
[32] Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film
Zhang Kai-biao
Ma Shu-yi
Ma Zi-jun
Chen Hai-xia
OPTOELECTRONICS LETTERS, 2006, 2 (01) : 48 - 50
[33] Electroluminescence from Si/SiO2 films deposited on p-Si substrates
Ma, SY
Xiao, Y
Chen, H
CHINESE PHYSICS, 2002, 11 (09): : 960 - 962
[34] Trap-assisted tunneling in AlGaN avalanche photodiodes
Shao, Z. G.
Gu, Q. J.
Yang, X. F.
Zhang, J.
Kuang, Y. W.
Zhang, D. B.
Yu, H. L.
Hong, X. K.
Feng, J. F.
Liu, Y. S.
AIP ADVANCES, 2017, 7 (06):
[35] Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film
Kai-biao Zhang
Shu-yi Ma
Zi-jun Ma
Hai-xia Chen
Optoelectronics Letters, 2006, 2 (1) : 48 - 50
[36] Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film
ZHANG Kai-biao~*
OptoelectronicsLetters, 2006, (01) : 48 - 50
[37] Modeling of Tunneling Currents on Al/SiO2/p-Si MOS Capacitors with Nanometer-Thick Oxides
Mulyanti, Budi
Hasanah, Lilik
Pantjawati, Arjuni B.
Murakami, Hideki
Khairurrijal
PROCEEDINGS OF 2013 3RD INTERNATIONAL CONFERENCE ON INSTRUMENTATION, COMMUNICATIONS, INFORMATION TECHNOLOGY, AND BIOMEDICAL ENGINEERING (ICICI-BME), 2013, : 265 - 268
[38] Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures
Vyalykh, DV
Fedoseenko, SI
SEMICONDUCTORS, 1999, 33 (06) : 654 - 657
[39] Scanning tunneling microscopy investigation of the microtopography of SiO2 and Si surfaces at the Si/SiO2 interface in SIMOX structures
D. V. Vyalykh
S. I. Fedoseenko
Semiconductors, 1999, 33 : 654 - 657
[40] Trap-assisted tunneling at temperatures near 77 K in laser annealed Si n+-p junctions
Simeonov, SS
Kafedjiiska, E
Szekeres, A
Ristoscu, C
Gyorgy, E
Mihailescu, IN
JOURNAL OF APPLIED PHYSICS, 2001, 90 (02) : 860 - 865

← 1 2 3 4 5 →