An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance

被引：21
|
作者：
Hu, MC [1 ]
Jang, SL [1 ]
机构：
[1] Natl Taiwan Inst Technol, Dept Elect Engn, Taipei 106, Taiwan
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期
关键词：
self-heating; series resistance; SOI MOSFET;
D O I：
10.1109/16.662778
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET's applicable for circuit simulation, The model was developed by using a two-dimensional (2-D) Poisson equation, and considering the source/drain resistance and the self-heating effect, using the present model, we can clearly see that the reduction of drain current with the parasitic series resistance and self-heating effect for typical SOI devices, We also can evaluate the impact of series resistance and self-heating effects, The accuracy of the presented model has been verified with the experimental data of SOI MOS devices with various geometries.
引用
收藏
页码：797 / 801
页数：5
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