New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

被引：5
|
作者：
Pidin, S [1 ]
Koyanagi, M [1 ]
机构：
[1] Tohoku Univ, Fac Engn, Dept Machine Intelligence & Syst Engn, Aoba Ku, Sendai, Miyagi 98077, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期
关键词：
SOI MOSFET; subthreshold current; two-dimensional model;
D O I：
10.1143/JJAP.37.1264
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model Is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.
引用
收藏
页码：1264 / 1270
页数：7
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