New analytical model for subthreshold current in short-channel fully-depleted SOI MOSFETs

被引：5

作者：

Pidin, S ^{[1
]}

Koyanagi, M ^{[1
]}

机构：

[1] Tohoku Univ, Fac Engn, Dept Machine Intelligence & Syst Engn, Aoba Ku, Sendai, Miyagi 98077, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1998年 / 37卷 / 3B期

关键词：

SOI MOSFET; subthreshold current; two-dimensional model;

D O I：

10.1143/JJAP.37.1264

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new two-dimensional model for subthreshold current in fully-depleted silicon-on-insulator metal-oxide-semiconductor field effect transistor (SOI MOSFET) is developed. The model Is based on analytical approximation of two-dimensional Poissons's equation solution, drift-diffusion current equation and accounts for the drain-induced barrier lowering and channel-length modulation in weak inversion. The model provides a convenient tool for the design of submicron SOI MOSFETs.

引用

页码：1264 / 1270

页数：7

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