A new drain current model for short-channel MOSFETs

被引：2
|
作者：
Abbasian, S [1 ]
Farjah, E [1 ]
机构：
[1] Shiraz Univ, Dept Elect & Elect Engn, Shiraz 7134851154, Iran
来源：
MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 02期
关键词：
D O I：
10.1016/S0026-2714(02)00272-X
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Reduction of channel length makes the channel current to be less than that of drain current. In this paper, by using multiplication factor model [Proc. IEEE IRPS. (1996) 318, Proc. IEEE IRPS (1999) 167] and a simple approximation of the collector current of PBT the drain current in short-channel MOSFETs is modeled and simulated. This model makes use of four parameters, which by extracting them for each device, it is possible to calculate total drain current. The simulation results from this model are compared with the results obtained from MINIMOS, in which match observed between them. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：333 / 338
页数：6
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