A compact drain current model of short-channel cylindrical gate-all-around MOSFETs

被引：35

作者：

Tsormpatzoglou, A. ^{[1
,2
]}

Tassis, D. H. ^{[1
]}

Dimitriadis, C. A. ^{[1
]}

Ghibaudo, G. ^{[2
]}

Pananakakis, G. ^{[2
]}

Clerc, R. ^{[2
]}

机构：

[1] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] MINATEC, IMEP, F-38054 Grenoble 9, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2009年 / 24卷 / 07期

关键词：

CHARGE MODEL;

D O I：

10.1088/0268-1242/24/7/075017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A fully analytical potential model, valid in the weak inversion regime of short-channel cylindrical gate-all-around (GAA) MOSFET, is proposed. The model derivation is based on a previous analytical expression for tetragonal GAA MOSFET and the rotational symmetry of the tetragonal cross section. Device simulations were performed to verify that the potential distribution along the channel is properly described in all positions within the silicon body. Using the potential model, analytical expressions for the threshold voltage, subthreshold swing and drain-induced barrier lowering have been derived. Including the short-channel effects within an existing model for the subthreshold leakage current and an analytical drain current model of long-channel devices in strong inversion, a compact drain current model has been derived describing with good accuracy the transfer and output characteristics of short-channel GAA MOSFETs in all regions of operation.

引用

页数：8

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[1] Comment on 'A compact drain current model of short-channel cylindrical gate-all-around MOSFETs'
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Kumar, Subindu
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (03)
[2] Reply to 'Comment on "A compact drain current model of short-channel cylindrical gate-all-around MOSFETs"'
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2014, 29 (03)
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