ANALYTICAL DEVICE MODEL OF SOI MOSFETS INCLUDING SELF-HEATING EFFECT

被引：32
|
作者：
YASUDA, N [1 ]
UENO, S [1 ]
TANIGUCHI, K [1 ]
HAMAGUCHI, C [1 ]
YAMAGUCHI, Y [1 ]
NISHIMURA, T [1 ]
机构：
[1] MITSUBISHI ELECTR CO,LSI RES & DEV LAB,ITAMI,HYOGO 664,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
SOI MOSFET; NEGATIVE DIFFERENTIAL CONDUCTANCE; TEMPERATURE RISE; SELF-HEATING; DEVICE CHARACTERISTICS; TRANSIENT DRAIN CURRENT;
D O I：
10.1143/JJAP.30.3677
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A simple analytical model for device characteristics of silicon-on-insulator (SOI) MOSFETs is proposed. The effect of the self-heating is incorporated into a pseudo-2-dimensional drain-current model through an analytical expression using a thermal distribution-constant circuit. The device characteristics calculated with the model were found to agree well with experimental drain-current characteristics.
引用
收藏
页码：3677 / 3684
页数：8
相关论文
共 50 条
  • [1] SPICE MODEL AND PARAMETERS FOR FULLY-DEPLETED SOI MOSFETS INCLUDING SELF-HEATING
    SU, LT
    ANTONIADIS, DA
    ARORA, ND
    DOYLE, BS
    KRAKAUER, DB
    [J]. IEEE ELECTRON DEVICE LETTERS, 1994, 15 (10) : 374 - 376
  • [2] Comparison of self-heating effect in GAA and SOI mosfets
    Francis, P
    Colinge, JP
    Flandre, D
    [J]. MICROELECTRONICS RELIABILITY, 1997, 37 (01) : 61 - 75
  • [3] A Simple Proposal to Reduce Self-heating Effect in SOI MOSFETs
    Hasan Ghasemi
    Mohammad Hazhir Mozaffari
    [J]. Silicon, 2021, 13 : 4189 - 4198
  • [4] An analytical MOSFET breakdown model including self-heating effect
    Ho, CS
    Liou, JJ
    Chen, F
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (01) : 125 - 131
  • [5] A Simple Proposal to Reduce Self-heating Effect in SOI MOSFETs
    Ghasemi, Hasan
    Mozaffari, Mohammad Hazhir
    [J]. SILICON, 2021, 13 (11) : 4189 - 4198
  • [6] Investigation of Self-Heating Effect on the Void Embedded SOI MOSFETs
    Liu, Yizhan
    Liu, Xiaoyan
    [J]. 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 232 - 234
  • [7] Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process
    李逸帆
    倪涛
    李晓静
    王娟娟
    高林春
    卜建辉
    李多力
    蔡小五
    许立达
    李雪勤
    王润坚
    曾传滨
    李博
    赵发展
    罗家俊
    韩郑生
    [J]. Chinese Physics B, 2023, 32 (09) : 605 - 612
  • [8] Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process
    Li, Yi-Fan
    Ni, Tao
    Li, Xiao-Jing
    Wang, Juan-Juan
    Gao, Lin-Chun
    Bu, Jian-Hui
    Li, Duo-Li
    Cai, Xiao-Wu
    Xu, Li-Da
    Li, Xue-Qin
    Wang, Run-Jian
    Zeng, Chuan-Bin
    Li, Bo
    Zhao, Fa-Zhan
    Luo, Jia-Jun
    Han, Zheng-Sheng
    [J]. CHINESE PHYSICS B, 2023, 32 (09)
  • [9] Dynamic NBTI Simulation Coupling with Self-Heating Effect in SOI MOSFETs
    Li, Xiangbin
    Ma, Chenyue
    Zhang, Lining
    Sun, Fu
    Lin, Xinnan
    Chan, Mansun
    [J]. PROCEEDINGS OF THE 2016 IEEE 23RD INTERNATIONAL SYMPOSIUM ON THE PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA), 2016, : 43 - 46
  • [10] Extraction of self-heating free IN curves including the substrate current of PD SOI MOSFETs
    Chen, Qiang
    Wu, Zhi-Yuan
    Su, Richard Y. K.
    Goo, Jung-Suk
    Thuruthiyil, Ciby
    Radwin, Martin
    Subba, Niraj
    Suryagandh, Sushant
    Ly, Tran
    Wason, Vineet
    An, Judy X.
    Icel, Ali B.
    [J]. 2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS, 2007, : 272 - +
12345