Extraction of self-heating free IN curves including the substrate current of PD SOI MOSFETs

被引：7

作者：

Chen, Qiang ^{[1
]}

Wu, Zhi-Yuan ^{[1
]}

Su, Richard Y. K. ^{[1
]}

Goo, Jung-Suk ^{[1
]}

Thuruthiyil, Ciby ^{[1
]}

Radwin, Martin ^{[1
]}

Subba, Niraj ^{[1
]}

Suryagandh, Sushant ^{[1
]}

Ly, Tran ^{[1
]}

Wason, Vineet ^{[1
]}

An, Judy X. ^{[1
]}

Icel, Ali B. ^{[1
]}

机构：

[1] Adv Micro Devices Inc, 1 AMD Pl,POB 3453,MS 79, Sunnyvale, CA 94088 USA

来源：

2007 IEEE INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES, PROCEEDINGS | 2007年

关键词：

compact modeling; self-heating; SOI; substrate current;

D O I：

10.1109/ICMTS.2007.374498

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC measurement. It is verified to be accurate with Hspice simulations and suitable for SPICE model parameter extraction. It is also demonstrated that extraction of self-heating free I-V curves is not only desired for efficient SPICE model generation, but also required to accurately capture the true temperature dependences in the models.

引用

页码：272 / +

页数：2

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