An analytical fully-depleted SOI MOSFET model considering the effects of self-heating and source/drain resistance

被引：21

作者：

Hu, MC ^{[1
]}

Jang, SL ^{[1
]}

机构：

[1] Natl Taiwan Inst Technol, Dept Elect Engn, Taipei 106, Taiwan

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 04期

关键词：

self-heating; series resistance; SOI MOSFET;

D O I：

10.1109/16.662778

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we present a new and analytical drain current model for submicrometer SOI MOSFET's applicable for circuit simulation, The model was developed by using a two-dimensional (2-D) Poisson equation, and considering the source/drain resistance and the self-heating effect, using the present model, we can clearly see that the reduction of drain current with the parasitic series resistance and self-heating effect for typical SOI devices, We also can evaluate the impact of series resistance and self-heating effects, The accuracy of the presented model has been verified with the experimental data of SOI MOS devices with various geometries.

引用

页码：797 / 801

页数：5

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