A new analytical model of SRAM cell stability in low-voltage operation

被引：5
|
作者：
Ichikawa, T
Sasaki, M
机构：
[1] Device Development Department, MOS I SI Div., Semiconductor Company, Sony Corporation
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 01期
关键词：
D O I：
10.1109/16.477593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytical model of MOS SRAM ceh stability is presented as the measure of cell stability in low-voltage operation. The model individually deals with transistor parameters together with parasitic resistance in the cell, Mutual effects of cell-parameter variation on the lower limit of supply voltage is clarified for the first time. The V-CCmin's of a conventional cell and a split wordline (SWL) cell are evaluated under the consideration of fabricated ceh patterns, and superiority of the SWL cell is shown. This superiority is mainly attributed to its simple layout of the MOSFET's in the cell rather than its symmetrical layout.
引用
收藏
页码：54 / 61
页数：8
相关论文
共 50 条
  • [31] Prediction of overshoot and crosstalk of low-voltage GaN HEMT using analytical model
    Wu, Yingzhe
    Yin, Shan
    Dong, Minghai
    Jin, Shoudong
    Li, Hui
    Cheng, Yuhua
    See, Kye Yak
    [J]. IET POWER ELECTRONICS, 2022, 15 (13) : 1295 - 1321
  • [32] An Analytical Switching Process Model of Low-Voltage eGaN HEMTs for Loss Calculation
    Wang, Kangping
    Yang, Xu
    Li, Hongchang
    Ma, Huan
    Zeng, Xiangjun
    Chen, Wenjie
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2016, 31 (01) : 635 - 647
  • [33] A Timing-Shared Adaptive Sensing Methodology for Low-Voltage SRAM
    Zhou, Yongliang
    Yang, Zhen
    Wei, Yiming
    Lin, Xiao
    Wu, Saiai
    Lu, Wenjuan
    Peng, Chunyu
    Li, Xin
    Wu, Xiulong
    [J]. 2024 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS 2024, 2024,
  • [34] LOW-TEMPERATURE LOW-VOLTAGE OPERATION OF HEMTS ON INP
    SYLVESTRE, A
    CROZAT, P
    ADDE, R
    DELUSTRAC, A
    JIN, Y
    [J]. JOURNAL DE PHYSIQUE IV, 1994, 4 (C6): : 153 - 158
  • [35] A new accurate SPICE model for low-voltage power FLIMOSFETs
    Galadi, A.
    Morancho, F.
    Hassani, M. M.
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2008, 23 (04)
  • [36] Stable Local Bit-Line 6 T SRAM Architecture Design for Low-Voltage Operation and Access Enhancement
    Sheu, Ming-Hwa
    Morsalin, S. M. Salahuddin
    Tsai, Chang-Ming
    Yang, Cheng-Jie
    Hsia, Shih-Chang
    Hsueh, Ya-Hsin
    Lin, Jin-Fa
    Chang, Chuan-Yu
    [J]. ELECTRONICS, 2021, 10 (06) : 1 - 11
  • [37] An Area Efficient Low-Voltage 6-T SRAM Cell Using Stacked Silicon Nanowires
    Huang, Ya-Chi
    Chiang, Meng-Hsueh
    Wang, Shui-Jinn
    Gupta, Sumeet Kumar
    [J]. 2018 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT 2018), 2018, : 117 - 120
  • [38] TRADING OFF CACHE CAPACITY FOR LOW-VOLTAGE OPERATION
    Wilkerson, Chris
    Gao, Hongliang
    Alameldeen, Alaa R.
    Chishti, Zeshan
    Khellah, Muhammad
    Lu, Shih-Lien
    [J]. IEEE MICRO, 2009, 29 (01) : 96 - 103
  • [39] Limitations to low-voltage focused ion beam operation
    Rauscher, M
    Marianowski, K
    Degel, B
    Plies, E
    [J]. MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 815 - 818
  • [40] SAM key to low-voltage operation ELECTRONIC MATERIALS
    Sealy, Cordelia
    [J]. MATERIALS TODAY, 2004, 7 (12) : 7 - 7
12345