A new accurate SPICE model for low-voltage power FLIMOSFETs

被引：2
|
作者：
Galadi, A. [1 ,2 ,3 ]
Morancho, F. [1 ,3 ]
Hassani, M. M. [2 ]
机构：
[1] Univ Toulouse, UPS, F-31077 Toulouse, France
[2] Univ Cadi Ayyad, Marrakech, Morocco
[3] CNRS, LAAS, F-31077 Toulouse, France
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 04期
关键词：
D O I：
10.1088/0268-1242/23/4/045017
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new SPICE-compatible circuit model for low-voltage power FLIMOSFETs is presented. This modeling is based on device physics and uses a new expression for the current-voltage characteristics in the linear region. Consequently, the new model gives better results than the SPICE level 3 MOS model, widely used for power MOSFET models. In addition, the interelectrode capacitances are taken into account in the model. Finally, the new model is validated by comparing the simulated and measured static and dynamic characteristics.
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页数：8
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