A new analytical model of SRAM cell stability in low-voltage operation

被引：5
|
作者：
Ichikawa, T
Sasaki, M
机构：
[1] Device Development Department, MOS I SI Div., Semiconductor Company, Sony Corporation
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1996年 / 43卷 / 01期
关键词：
D O I：
10.1109/16.477593
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new analytical model of MOS SRAM ceh stability is presented as the measure of cell stability in low-voltage operation. The model individually deals with transistor parameters together with parasitic resistance in the cell, Mutual effects of cell-parameter variation on the lower limit of supply voltage is clarified for the first time. The V-CCmin's of a conventional cell and a split wordline (SWL) cell are evaluated under the consideration of fabricated ceh patterns, and superiority of the SWL cell is shown. This superiority is mainly attributed to its simple layout of the MOSFET's in the cell rather than its symmetrical layout.
引用
收藏
页码：54 / 61
页数：8
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