Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors

被引：2
|
作者：
Ling, CH
Ooi, JA
Ang, DS
机构：
[1] Department of Electrical Engineering, National University of Singapore
来源：
ELECTRONICS LETTERS | 1996年 / 32卷 / 10期
关键词：
tunnelling; MOS capacitors;
D O I：
10.1049/el:19960597
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. An initial high pr-tunnelling current, decreasing with subsequent gate bias scan, is reported for non-polycided device tunnellin from the gate. This is attributed to the charging of oxide electron traps. A temperature anneal at 200 degrees C demonstrates that these traps are rechargeable.
引用
收藏
页码：933 / 934
页数：2
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