INFLUENCE OF THE OXIDE CHARGE BUILDUP DURING FOWLER-NORDHEIM STRESS ON THE CURRENT-VOLTAGE CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS

被引：3
|
作者：
ELRHARBI, S [1 ]
JOURDAIN, M [1 ]
机构：
[1] UNIV REIMS,APPLICAT MICROELECTRON LAB,F-51062 REIMS,FRANCE
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷
关键词：
D O I：
10.1016/0022-3093(95)00133-6
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A study of the influence of the oxide charge build-up during Fowler-Nordheim is presented, emphasizing the current-voltage characteristics. In some cases, a diminution of the slope of current-voltage characteristics was observed. It is shown that the slope variation is due to a change of the cathode field which is basically related on the location of the oxide charge. The proximity of this oxide charge (positive or negative) to substrate-Si/SiO2 or gate/SiO2 interfaces modifies the shape of the tunneling barrier. From a qualitative analysis of the voltage shifts of current-voltage and capacitance-voltage characteristics, the origins of the oxide charge have been discussed and the degradation of the oxide is found to be consistent with both mechanisms of trap creation and/or impact ionization.
引用
收藏
页码：175 / 180
页数：6
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