Investigation of initial charge trapping and oxide breakdown under Fowler-Nordheim injection

被引：2
|
作者：
Martin, A [1 ]
机构：
[1] Siemens AG, HL ZUV MON, Semicond Div, Wafer Level Reliabil Engn, D-81739 Munich, Germany
来源：
1998 IEEE INTERNATIONAL INTEGRATED RELIABIILTY WORKSHOP FINAL REPORT | 1998年
关键词：
D O I：
10.1109/IRWS.1998.745379
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：99 / 104
页数：6
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