Effects of tungsten silicidation on Fowler-Nordheim tunnelling current and charge trapping in polysilicon-oxide-silicon capacitors

被引：2

作者：

Ling, CH

Ooi, JA

Ang, DS

机构：

[1] Department of Electrical Engineering, National University of Singapore

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 10期

关键词：

tunnelling; MOS capacitors;

D O I：

10.1049/el:19960597

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Results of Fowler-Nordheim current stress are compared for tungsten polycided and non-polycided gate MOS capacitors. An initial high pr-tunnelling current, decreasing with subsequent gate bias scan, is reported for non-polycided device tunnellin from the gate. This is attributed to the charging of oxide electron traps. A temperature anneal at 200 degrees C demonstrates that these traps are rechargeable.

引用

页码：933 / 934

页数：2