Analysis of positive charge trapping in silicon dioxide of MOS capacitors during Fowler-Nordheim stress

被引：15

作者：

Samanta, P ^{[1
]}

Sarkar, CK ^{[1
]}

机构：

[1] BE COLL DU,HOWRAH 711103,INDIA

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(96)00106-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Metal-oxide-silicon (MOS) device degradation due to trapped holes in thermally grown thin (22-33 nm) SiO2 gate oxides under Fowler-Nordheim (FN) stress at low injected electron fluence has been analyzed theoretically. A comparative study of degradation under various modes of FN stressing (constant current and constant voltage) from the accumulated layer of [100] n-Si of n-PolySi gate MOS capacitors is presented. The present analysis is based on tunneling electron initiated band-to-band impact ionization in SiO2 as the possible source of generated holes. The theoretical analysis is extended with Gaussian and uniform distribution of trapped holes in the oxide. The theoretical results obtained from the model are in good agreement with the experimental results of FN threshold voltage shift as a function of electron fluence obtained by Fazan et al. (C) 1997 Elsevier Science Ltd.

引用

页码：459 / 464

页数：6

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