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- [41] A 110 mW 6 bit 36 GS/s interleaved SAR ADC for 100 GBE occupying 0.048 mm2 in 32 nm SOI CMOS 2014 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC), 2014, : 89 - 92
- [42] A 10.3GS/s 6bit (5.1 ENOB at Nyquist) time-interleaved/pipelined ADC using open-loop amplifiers and digital calibration in 90nm CMOS 2008 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2008, : 18 - +
- [43] A 13bit 5GS/s ADC with time-interleaved chopping calibration in 16nm FinFET 2018 IEEE SYMPOSIUM ON VLSI CIRCUITS, 2018, : 99 - 100
- [45] A 1GS/s 10b 18.9mW Time-Interleaved SAR ADC with Background Timing-Skew Calibration 2014 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE DIGEST OF TECHNICAL PAPERS (ISSCC), 2014, 57 : 384 - +
- [46] A CMOS 15-bit 125-MS/s time-interleaved ADC with digital background. calibration PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2006, : 209 - 212
- [47] A 12 Bit 500 MS/s Sub-2 Radix SAR ADC for a Time-Interleaved 8 GS/s ADC in 28 nm CMOS 2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2021,
- [48] A 1.35 GS/s, 10b, 175 mW time-interleaved AD converter in 0.13 μm CMOS 2007 SYMPOSIUM ON VLSI CIRCUITS, DIGEST OF TECHNICAL PAPERS, 2007, : 62 - 63
- [49] A 38-mW 7-bit 5-GS/s Time-Interleaved SAR ADC with Background Skew Calibration 2018 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC): PROCEEDINGS OF TECHNICAL PAPERS, 2018, : 243 - 246