A 12 Bit 500 MS/s Sub-2 Radix SAR ADC for a Time-Interleaved 8 GS/s ADC in 28 nm CMOS

被引:0
|
作者
Buballa, Frowin [1 ]
Linnhoff, Sebastian [1 ]
Reinhold, Michael [2 ]
Gerfers, Friedel [1 ]
机构
[1] Tech Univ Berlin, Chair Mixed Signal Circuit Design, Berlin, Germany
[2] Eesy Ic GmbH, Erlangen, Germany
关键词
D O I
10.1109/ISCAS51556.2021.9401273
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents the design of a subsampling wideband 500 MS/s 12 Bit successive-approximation-register (SAR) analog-to-digital converter (ADC) with sub-2 radix split-capacitor array (SCA). The presented ADC is designed as a sub-ADC for a sample-and-hold-less (SAH-less) 8 GS/s time-interleaved (TI) ADC. In addition to the required 16 ADC channels, two additional SAR lanes enable pseudorandom binary sequence (PRBS)-driven channel scrambling. A 1.81 radix is used to achieve 12 Bit settling accuracy withing 70 ps. Extra scaling capacitors in the SCA enable SAR reference voltage levels near the supply rails, significantly reducing the SCA switch sizes. The necessity of a comparator latch reset phase is eliminated at the cost of higher comparator power consumption by the adoption of a loop-unrolled comparator improving the SAR loop timing. Top-plate charge kickback into the input buffer, a challenge that occurs within TI ADCs, is largely eliminated by implementing an additional reset phase within the SAR algorithm and the use of a boosted input T-switch. SCA and time-interleaved channel mismatch effects are addressed by calibrating each sub-ADC to an extra reference-ADC. The industry grade ADC design, achieves a spurious free dynamic range (SFDR) of 72 dB and signal to noise and distortion ratio (SNDR) of 54 dB across the entire 4GHz frequency range. Designed in a 28nm CMOS process, each sub-ADC consumes 33mW from 1.8V and 1V. The input buffer frontend uses supply voltages of 2.5V and -1.3V. The overall power consumption of the overall TI ADC is 3W.
引用
收藏
页数:5
相关论文
共 50 条
  • [1] A 12 bit 8 GS/s Time-Interleaved SAR ADC in 28 nm CMOS
    Linnhoff, Sebastian
    Buballa, Frowin
    Reinhold, Michael
    Gerfers, Friedel
    2020 27TH IEEE INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS AND SYSTEMS (ICECS), 2020,
  • [2] A 56 GS/s 8 Bit Time-Interleaved ADC in 28 nm CMOS
    Luan, Jian
    Zheng, Xuqiang
    Wu, Danyu
    Zhang, Yuzhen
    Wu, Linzhen
    Zhou, Lei
    Wu, Jin
    Liu, Xinyu
    ELECTRONICS, 2022, 11 (05)
  • [3] A 2.6 GS/s 8-Bit Time-Interleaved SAR ADC in 55 nm CMOS Technology
    Wang, Dong
    Zhu, Xiaoge
    Guo, Xuan
    Luan, Jian
    Zhou, Lei
    Wu, Danyu
    Liu, Huasen
    Wu, Jin
    Liu, Xinyu
    ELECTRONICS, 2019, 8 (03):
  • [4] An 8-Bit 0.333-2 GS/s Configurable Time-Interleaved SAR ADC in 65-nm CMOS
    Li, Dengquan
    Zhang, Liang
    Zhu, Zhangming
    Yang, Yintang
    JOURNAL OF CIRCUITS SYSTEMS AND COMPUTERS, 2015, 24 (06)
  • [5] A Low-Power 12-bit 2GS/s Time-Interleaved Pipelined-SAR ADC in 28nm CMOS Process
    Wang, Xiao
    Wang, Chengwei
    Li, Fule
    Wang, Zhihua
    2018 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2018,
  • [6] An 8-b 8-GS/s Time-Interleaved SAR ADC With Foreground Offset Calibration in 28nm CMOS
    Yang, Zhanpeng
    Xing, Xinpeng
    Zheng, Xinfa
    Feng, Haigang
    Fu, Hongyan
    Gielen, Georges
    2022 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, APCCAS, 2022, : 181 - 184
  • [7] A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS
    Hayun Chung
    Zeynep Toprak Deniz
    Alexander Rylyakov
    John Bulzacchelli
    Daniel Friedman
    Gu-Yeon Wei
    Analog Integrated Circuits and Signal Processing, 2015, 85 : 299 - 310
  • [8] A 7.5 GS/s flash ADC and a 10.24 GS/s time-interleaved ADC for backplane receivers in 65 nm CMOS
    Chung, Hayun
    Deniz, Zeynep Toprak
    Rylyakov, Alexander
    Bulzacchelli, John
    Friedman, Daniel
    Wei, Gu-Yeon
    ANALOG INTEGRATED CIRCUITS AND SIGNAL PROCESSING, 2015, 85 (02) : 299 - 310
  • [9] A 4GS/s 8-bit time-interleaved SAR ADC with an energy-efficient architecture in 130 nm CMOS
    Solis, Fredy
    Fernandez Bocco, Alvaro
    Galetto, Agustin C.
    Passetti, Leandro
    Hueda, Mario R.
    Reyes, Benjamin T.
    INTERNATIONAL JOURNAL OF CIRCUIT THEORY AND APPLICATIONS, 2021, 49 (10) : 3171 - 3185
  • [10] A 56-GS/s 8-bit Time-Interleaved ADC With ENOB and BW Enhancement Techniques in 28-nm CMOS
    Sun, Kexu
    Wang, Guanhua
    Zhang, Qing
    Elahmadi, Salam
    Gui, Ping
    IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2019, 54 (03) : 821 - 833