Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout

被引：0
|
作者：
Donato, Nazareno [1 ]
Udrea, Florin [1 ]
Mihaila, Andrei [2 ]
Knoll, Lara [2 ]
Romano, Gianpaolo [2 ]
Kranz, Lukas [2 ]
Antoniou, Marina [3 ]
机构：
[1] Univ Cambridge, Dept Engn, Cambridge, England
[2] ABB Power Grids Switzerland Ltd, Power Grids Res, CH-5405 Baden, Switzerland
[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England
来源：
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年
基金：
英国工程与自然科学研究理事会;
关键词：
Junction Barrier Schottky diodes; JBS; SiC; surge current; SiC diodes; MPS;
D O I：
10.1109/ispsd46842.2020.9170197
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Commercially available high voltage Silicon Carbide (SiC) Junction Barrier Schottky (JBS) are typically designed with advanced anode topography depending on the manufacturer and the specific current-voltage rating. The anode layout of JBS rectifiers affects a wide range of electro-thermal parameters such as the leakage current and the response of the diode to over-current events (surge current capability). In this paper, the effect of 3D anode geometries for the active area of 3.3 kV-20 A SiC JBS diodes is investigated in detail for both single and repetitive surge current events. By means of advanced 3D electro-thermal finite element simulations, a trade-off between the main factors which are contributing to the bipolar behavior activation is identified.
引用
收藏
页码：198 / 201
页数：4
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