Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers

被引：9
|
作者：
Palmour, J. W. [1 ]
Levinshtein, M. E. [2 ]
Ivanov, P. A. [2 ]
Zhang, Q. J. [1 ]
机构：
[1] Cree Inc, Durham, NC 27703 USA
[2] Ioffe Inst, St Petersburg 194021, Russia
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2015年 / 48卷 / 23期
基金：
俄罗斯基础研究基金会;
关键词：
silicon carbide; Schottky diodes; forward bias; high current density; minority; carriers; DIODES; BREAKDOWN; PULSE;
D O I：
10.1088/0022-3727/48/23/235103
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Isothermal forward current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers (JBS) have been studied for the first time. Isothermal characteristics were measured with JBS having a blocking voltage of 1700 V up to a current density j approximate to 4200 A cm(-2) in the temperature range 297-460 K. Quasi-isothermal current-voltage characteristics of these devices were studied with injection of minority carriers (holes) up to j approximate to 7200 A cm(-2) and ambient temperatures of 297 and 460 K. The isothermal forward current-voltage characteristics make it possible to numerically calculate (for example, by an iteration procedure) the overheating in an arbitrary operation mode.
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页数：5
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