The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode

被引：3
|
作者：
Na, M. [1 ]
Keum, J. [1 ,2 ]
Moon, J. H. [1 ]
Kang, I. H. [1 ]
Bahng, W. [1 ]
机构：
[1] Korea Electrotechnol Res Inst, Power Semicond Res Ctr, Chang Won 51543, South Korea
[2] Changwon Natl Univ, Dept Convergence Mat Sci & Engn, Chang Won 51140, South Korea
来源：
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 19 | 2018年 / 85卷 / 07期
关键词：
D O I：
10.1149/08507.0059ecst
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We investigated the relationship between threading dislocation and current-voltage (I-V) characteristics of 3.3 kV 4H-SiC Schottky barrier diodes (SBDs). The crystal defects were observed using non-destructive methods. X-ray topography (XRT) and electron beam induced current (EBIC) were used to compare the current-voltage characteristics of fabricated SBDs with defects. The surface and process defects were found to be fatal to devices performance such as ideality factor and leakage current increased and the breakdown deterioration. However, the threading dislocations rarely affected forward I-V characteristics and blocking voltage of fabricated 3.3 kV SBDs. The leakage current of the SBDs with threading dislocations in active region was increased by 10(3) compared with those of the SBDs without defect.
引用
收藏
页码：59 / 65
页数：7
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