Single and repetitive surge current events of 3.3 kV-20 A 4H-SiC JBS rectifiers: the impact of the anode layout

被引：0

作者：

Donato, Nazareno ^{[1
]}

Udrea, Florin ^{[1
]}

Mihaila, Andrei ^{[2
]}

Knoll, Lara ^{[2
]}

Romano, Gianpaolo ^{[2
]}

Kranz, Lukas ^{[2
]}

Antoniou, Marina ^{[3
]}

机构：

[1] Univ Cambridge, Dept Engn, Cambridge, England

[2] ABB Power Grids Switzerland Ltd, Power Grids Res, CH-5405 Baden, Switzerland

[3] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

来源：

PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020) | 2020年

基金：

英国工程与自然科学研究理事会;

关键词：

Junction Barrier Schottky diodes; JBS; SiC; surge current; SiC diodes; MPS;

D O I：

10.1109/ispsd46842.2020.9170197

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Commercially available high voltage Silicon Carbide (SiC) Junction Barrier Schottky (JBS) are typically designed with advanced anode topography depending on the manufacturer and the specific current-voltage rating. The anode layout of JBS rectifiers affects a wide range of electro-thermal parameters such as the leakage current and the response of the diode to over-current events (surge current capability). In this paper, the effect of 3D anode geometries for the active area of 3.3 kV-20 A SiC JBS diodes is investigated in detail for both single and repetitive surge current events. By means of advanced 3D electro-thermal finite element simulations, a trade-off between the main factors which are contributing to the bipolar behavior activation is identified.

引用

页码：198 / 201

页数：4

共 38 条

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