Reliability Investigation with Accelerated Body Diode Current Stress for 3.3 kV 4H-SiC MOSFETs with Various Buffer Epilayer Thickness

被引：0

作者：

Ebiike, Yuji ^{[1
]}

Murakami, Takeshi ^{[1
]}

Suekawa, Eisuke ^{[1
]}

Yamamoto, Shigehisa ^{[1
]}

Sumitani, Hiroaki ^{[1
]}

Imaizumi, Masayuki ^{[1
]}

Tarutani, Masayoshi ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Power Device Works, 1-1-1 Imajukuhigashi Nishi Ku, Fukuoka, Fukuoka 8190192, Japan

来源：

PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2018年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

3.3 kV 4H-SiC MOSFETs with various buffer layer thickness has been fabricated in order to investigate the bipolar degradation associated with the expansion of stacking faults (SFs). The body diode stress tests under DC current of 240 A/cm(2) were performed at 200 degrees C. Shifts in specific on-resistance (R-on,R-sp) and forward voltage (V-f) of body diode were markedly reduced for the MOSFETs with thick buffer layer of 30 mu m This result indicates that the body diode reliability may be improved by suitably designed buffer layer. The photoluminescence (PL) image of these SiC epilayer after the stress tests revealed the SF expansion due to the bipolar current stress was suppressed by the thick buffer layer.

引用

页码：447 / 450

页数：4

共 49 条

[1] Body Diode Reliability of 4H-SiC MOSFETs as a Function of Epitaxial Process Parameter
Kochoska, Sara
Franchi, Jimmy
Maslougkas, Sotirios
Domeij, Martin
Pham, Thanh-Toan
Sunkari, Swapna
Justice, Joshua
Das, Hrishikesh
Defect and Diffusion Forum, 2024, 434 : 7 - 13
[2] Investigation of drain current saturation in 4H-SiC MOSFETs
Pennington, G.
Potbhare, S.
Goldsman, N.
Habersat, D.
Lelis, A.
McGarrity, J.
Ashman, C.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 811 - +
[3] 3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss
Na, Jaeyeop
Kim, Kwansoo
2022 INTERNATIONAL CONFERENCE ON ELECTRONICS, INFORMATION, AND COMMUNICATION (ICEIC), 2022,
[4] Study of 4H-SiC Schottky Diode Designs for 3.3kV Applications
Bartolf, H.
Sundaramoorthy, V.
Mihaila, A.
Berthou, M.
Godignon, P.
Millan, J.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 795 - +
[5] Investigation of Gate Leakage Current Behavior for Commercial 1.2 kV 4H-SiC Power MOSFETs
Zhu, Shengnan
Liu, Tianshi
White, Marvin H.
Agarwal, Anant K.
Salemi, Arash
Sheridan, David
2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2021,
[6] The Effect of Threading Dislocation on Current-Voltage Characteristics of 3.3 kV 4H-SiC Schottky Barrier Diode
Na, M.
Keum, J.
Moon, J. H.
Kang, I. H.
Bahng, W.
WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 19, 2018, 85 (07): : 59 - 65
[7] Investigation of 3.3 kV 4H-SiC DC-FSJ MOSFET Structures
Chen, Chia-Yuan
Lai, Yun-Kai
Lee, Kung-Yen
Huang, Chih-Fang
Huang, Shin-Yi
MICROMACHINES, 2021, 12 (07)
[8] Degradation of 4H-SiC MOSFET body diode under repetitive surge current stress
Zhu, Zhengyun
Ren, Na
Xu, Hongyi
Liu, Li
Guo, Qing
Zhang, Junming
Sheng, Kuang
Wang, Zhenyu
PROCEEDINGS OF THE 2020 32ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD 2020), 2020, : 182 - 185
[9] Investigation into Short-Circuit Ruggedness of 1.2 kV 4H-SiC MOSFETs
Nakao, Y.
Watanabe, S.
Miura, N.
Imaizumi, M.
Oomori, T.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 1123 - 1126
[10] An Investigation of Body Diode Reliability in Commercial 1.2 kV SiC Power MOSFETs with Planar and Trench Structures
Qian, Jiashu
Shi, Limeng
Jin, Michael
Bhattacharya, Monikuntala
Shimbori, Atsushi
Yu, Hengyu
Houshmand, Shiva
White, Marvin H.
Agarwal, Anant K.
MICROMACHINES, 2024, 15 (02)

← 1 2 3 4 5 →