High Surge Current Ruggedness of 5kV Class 4H-SiC SiCGT

被引：0
|
作者：
Ogata, S. [1 ]
Asano, K. [1 ]
Sugawara, Y. [2 ]
Tanaka, A. [1 ]
Miyanagi, Y. [1 ]
Nakayama, K. [1 ]
Izumi, T. [1 ]
Hayashi, T. [1 ]
Nishimura, M. [1 ]
机构：
[1] Kansai Elect Power Co, Power Engn R&D Ctr, 3-11-20 Nakoji, Amagasaki, Hyogo 6610974, Japan
[2] SiC power elect network, Hitachi, Ibaraki 3160026, Japan
来源：
2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2010年
关键词：
DIODES;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200 degrees C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm(2)) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction of Si diodes.
引用
收藏
页码：369 / 372
页数：4
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