High Surge Current Ruggedness of 5kV Class 4H-SiC SiCGT

被引：0

作者：

Ogata, S. ^{[1
]}

Asano, K. ^{[1
]}

Sugawara, Y. ^{[2
]}

Tanaka, A. ^{[1
]}

Miyanagi, Y. ^{[1
]}

Nakayama, K. ^{[1
]}

Izumi, T. ^{[1
]}

Hayashi, T. ^{[1
]}

Nishimura, M. ^{[1
]}

机构：

[1] Kansai Elect Power Co, Power Engn R&D Ctr, 3-11-20 Nakoji, Amagasaki, Hyogo 6610974, Japan

[2] SiC power elect network, Hitachi, Ibaraki 3160026, Japan

来源：

2010 22ND INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD) | 2010年

关键词：

DIODES;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ruggedness of SiCGT (SiC Commutated Gate Turn-off Thyristor) was investigated. The SiCGT was confirmed to operate at over 1200 degrees C, a higher temperature than Si device's destruction temperature. The SiCGT endured a large current of over 2000A (2470A/cm(2)) per one chip. Positive temperature coefficient resistor behavior could be found during the destruction of SiCGT, which was different from the destruction of Si diodes.

引用

页码：369 / 372

页数：4

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