P-type doping of GaN by Mg+ implantation

被引：0

作者：

Yao, SD ^{[1
]}

Zhou, SQ

Yang, ZJ

Lu, YH

Sun, CC

Sun, C

Zhang, GY

Vantomme, A

Pipeleers, B

Zhao, Q

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[2] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China

[3] Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium

来源：

CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 01期

关键词：

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (chi(min) = 1.6%) and after implantation (chi(min) = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.

引用

页码：102 / 104

页数：3

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