Mg doping for p-type AlInN lattice-matched to GaN

被引：43

作者：

Taniyasu, Yoshitaka ^{[1
,2
]}

Carlin, Jean-Francois ^{[2
]}

Castiglia, Antonino ^{[2
]}

Butte, Raphael ^{[2
]}

Grandjean, Nicolas ^{[2
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Ecole Polytech Fed Lausanne, Inst Condensed Matter Phys, CH-1015 Lausanne, Switzerland

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 08期

关键词：

EFFECTIVE-MASS PARAMETERS; FUNDAMENTAL-BAND GAP; WURTZITE ALN; DOPED GAN; INN; INDIUM; DIODES;

D O I：

10.1063/1.4747524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

P-type AlInN layers lattice-matched to GaN are achieved by Mg doping. The net acceptor concentration N-A-N-D is 5 x 10(18) cm(-3) at a Mg concentration [Mg] of similar to 2 x 10(19) cm(-3). Mg acceptors are partly compensated and one of the compensating defects is related to the occurrence of surface pits. At [Mg] < 2 x 10(19) cm(-3), the pit density is independent of [Mg] and N-A-N-D increases together with increasing [Mg]. At [Mg] > 2 x 10(19) cm(-3), as [Mg] increases, the pit density increases and the N-A-N-D decreases. By decreasing the pit density, a higher N-A-N-D value is obtained and light-emitting diodes with p-type AlInN layer show improved emission intensity. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4747524]

引用

页数：5

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