Effect of Anodic Oxidation on the Characteristics of Lattice-Matched AlInN/GaN Heterostructures

被引：0
|
作者：
C. Pietzka
A. Denisenko
M. Alomari
F. Medjdoub
J.-F. Carlin
E. Feltin
N. Grandjean
E. Kohn
机构：
[1] Ulm University,Institute of Electron Devices and Circuits
[2] Ecole Polytechnique Federale de Lausanne,undefined
来源：
Journal of Electronic Materials | 2008年 / 37卷
关键词：
Lattice-matched, AlInN; anodic oxidation; surface states;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The effect of anodic oxidation on the electronic characteristics of lattice-matched AlInN/GaN heterostructures was investigated using field-effect transistor (FET) structures with the gate areas in direct contact with the electrolytes. The gate surface of the FETs was subjected to anodic oxidation in 0.1 M KOH. The oxidized heterostructures were analyzed by electrochemical impedance spectroscopy and by modeling the characteristics of the electrolyte-gate FETs and the energy-band diagram of the heterostructures. This analysis suggested that the anodic treatment induced a bulk oxidation of the AlInN barrier. The Fermi level at the oxidized AlInN surface was shifted deep into the bandgap. The oxidation led to a reduction of the carrier mobility and to partial depletion of the channel.
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页码：616 / 623
页数：7
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