Effects of GaN interlayer on the transport properties of lattice-matched AlInN/AlN/GaN heterostructures

被引：10

作者：

Wu, F. ^{[1
]}

Gao, K. H. ^{[1
]}

Li, Z. Q. ^{[1
]}

Lin, T. ^{[2
]}

Zhou, W. Z. ^{[3
]}

机构：

[1] Tianjin Univ, Dept Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Tianjin 300072, Peoples R China

[2] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[3] Guangxi Univ, Phys Sci & Technol Coll, Nanning 530004, Guangxi, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2015年 / 117卷 / 15期

基金：

中国国家自然科学基金;

关键词：

ELECTRON-MOBILITY; SCATTERING;

D O I：

10.1063/1.4918536

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the effects of GaN interlayer on the transport properties of two-dimensional electron gases confined in lattice-matched AlInN/AlN/GaN heterostructures. It is found that the Hall mobility is evidently enhanced when an additional ultrathin GaN interlayer is introduced between AlInN and AlN layers. The enhancement of the Hall mobility is especially remarkable at low temperature. The high Hall mobility results in a low sheet resistance of 23 Omega/square at 2K. Meanwhile, Shubnikov-de Haas oscillations (SdH) are also remarkably enhanced due to the existence of GaN interlayer. The enhancement of the SdH oscillations is related to the larger quantum mobility mu(q) owing to the suppression of the interface roughness, alloy disorder, and ionized impurity scatterings by the GaN interlayer. (C) 2015 AIP Publishing LLC.

引用

页数：5

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