P-type doping of GaN by Mg+ implantation

被引：0
|
作者：
Yao, SD [1 ]
Zhou, SQ
Yang, ZJ
Lu, YH
Sun, CC
Sun, C
Zhang, GY
Vantomme, A
Pipeleers, B
Zhao, Q
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China
[3] Katholieke Univ Leuven, Inst Kern Stralingsfys, B-3001 Louvain, Belgium
来源：
CHINESE PHYSICS LETTERS | 2003年 / 20卷 / 01期
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering and channelling spectrometry before (chi(min) = 1.6%) and after implantation (chi(min) = 4.1%). X-ray diffraction reveals the existence of implantation-induced damage in the case of post-implantation followed by rapid thermal annealing. The resistivity, average factor, carrier concentration and carrier mobility were measured by the Hall effect. The transformation from n-type to p-type for GaN was observed.
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页码：102 / 104
页数：3
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