Interrupted Mg doping of GaN with MOCVD for improved p-type layers

被引：5
|
作者：
Xing, Yanhui [1 ]
Han, Jun [1 ]
Liu, Jianping [1 ]
Niu, Nanhui [1 ]
Deng, Jun [1 ]
Litong [1 ]
Shen, Guangdi [1 ]
机构：
[1] Beijing Univ Technol, Beijing Optoelect Technol Lab, Beijing 100022, Peoples R China
来源：
VACUUM | 2007年 / 82卷 / 01期
关键词：
P-GaN; delta-doping; MOCVD; AFM;
D O I：
10.1016/j.vacuum.2006.12.012
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Uniformity doping, delta-doping and growth-interruption doping to produce gallium nitride (GaN): Mg has been investigated by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). It was demonstrated by electrical, optical, and surface studies that films produced by growth-interruption-Mg-doping produce the best crystal quality, this doping method increasing self-compensation because of the incorporation of additional impurities during the interruption period. Mg-delta-doping employs GaN:Mg/UGaN superlattices valence band edge oscillation to enhance hole concentration leading to significantly reduced p-type resistivity, enhanced hole mobility. This doping method also leads to improved surface morphology. (C) 2007 Published by Elsevier Ltd.
引用
收藏
页码：1 / 4
页数：4
相关论文
共 50 条
  • [1] P-type doping of GaN by Mg+ implantation
    Yao, SD
    Zhou, SQ
    Yang, ZJ
    Lu, YH
    Sun, CC
    Sun, C
    Zhang, GY
    Vantomme, A
    Pipeleers, B
    Zhao, Q
    [J]. CHINESE PHYSICS LETTERS, 2003, 20 (01) : 102 - 104
  • [2] Study of the heavily p-type doping of cubic GaN with Mg
    Hernandez-Gutierrez, C. A.
    Casallas-Moreno, Y. L.
    Rangel-Kuoppa, Victor-Tapio
    Cardona, Dagoberto
    Hu, Yaoqiao
    Kudriatsev, Yuri
    Zambrano-Serrano, M. A.
    Gallardo-Hernandez, S.
    Lopez-Lopez, M.
    [J]. SCIENTIFIC REPORTS, 2020, 10 (01)
  • [3] Study of the heavily p-type doping of cubic GaN with Mg
    C. A. Hernández-Gutiérrez
    Y. L. Casallas-Moreno
    Victor-Tapio Rangel-Kuoppa
    Dagoberto Cardona
    Yaoqiao Hu
    Yuri Kudriatsev
    M. A. Zambrano-Serrano
    S. Gallardo-Hernandez
    M. Lopez-Lopez
    [J]. Scientific Reports, 10
  • [4] p-type doping of Zn(Mg)BeSe epitaxial layers
    Tournié, E
    Faurie, JP
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (03) : 382 - 384
  • [5] Efficiency optimization of p-type doping in GaN:Mg layers grown by molecular-beam epitaxy
    Naranjo, FB
    Calleja, E
    Bougrioua, Z
    Trampert, A
    Kong, X
    Ploog, KH
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 270 (3-4) : 542 - 546
  • [6] Self-compensation in Mg doped p-type GaN grown by MOCVD
    Obloh, H
    Bachem, KH
    Kaufmann, U
    Kunzer, M
    Maier, M
    Ramakrishnan, A
    Schlotter, P
    [J]. JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) : 270 - 273
  • [7] Enhanced p-type conduction in GaN and AlGaN by Mg-δ-doping
    Nakarmi, ML
    Kim, KH
    Li, J
    Lin, JY
    Jiang, HX
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (18) : 3041 - 3043
  • [8] Mg doping for p-type AlInN lattice-matched to GaN
    Taniyasu, Yoshitaka
    Carlin, Jean-Francois
    Castiglia, Antonino
    Butte, Raphael
    Grandjean, Nicolas
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (08)
  • [9] The feasibility of tunable p-type Mg doping in a GaN monolayer nano sheet
    Xia, Congxin
    Peng, Yuting
    Wei, Shuyi
    Jia, Yu
    [J]. ACTA MATERIALIA, 2013, 61 (20) : 7720 - 7725
  • [10] Growth of p-type GaN – The role of oxygen in activation of Mg-doping
    Kumar, Ashutosh
    Berg, Martin
    Wang, Qin
    Salter, Michael
    Ramvall, Peter
    [J]. Power Electronic Devices and Components, 2023, 5
12345