Effects of the sequential implantation of Mg and N ions into GaN for p-type doping

被引：18

作者：

Sakurai, Hideki ^{[1
,2
,3
]}

Narita, Tetsuo ^{[4
]}

Kataoka, Keita ^{[4
]}

Hirukawa, Kazufumi ^{[2
]}

Sumida, Kensuke ^{[2
]}

Yamada, Shinji ^{[1
,2
,3
]}

Sierakowski, Kacper ^{[5
]}

Horita, Masahiro ^{[1
,2
]}

Ikarashi, Nobuyuki ^{[1
,2
]}

Bockowski, Michal ^{[1
,5
]}

Suda, Jun ^{[1
,2
]}

Kachi, Tetsu ^{[1
]}

机构：

[1] Nagoya Univ, IMaSS, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Elect, Nagoya, Aichi 4648603, Japan

[3] ULVAC Inc, ATI, Chigasaki, Kanagawa 2538543, Japan

[4] Toyota Cent Res & Dev Labs Inc, Nagakute, Aichi 4801192, Japan

[5] Polish Acad Sci, Inst High Pressure Phys, Sokolowska 29-37, PL-01142 Warsaw, Poland

来源：

APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 11期

关键词：

GaN; Mg implantation; N implantation; GaN power devices; ultra-high-pressure annealing; ACTIVATION;

D O I：

10.35848/1882-0786/ac2ae7

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The sequential implantation of Mg and N ions into GaN was investigated using conventional rapid thermal annealing and ultra-high-pressure annealing (UHPA). In cathodoluminescence, the green luminescence related to nitrogen vacancies (V(N)s) was mostly suppressed at the Mg/N ratio of 0.5-1.0, whereas the donor-acceptor pair (DAP) emission as a signature of Mg acceptors was maintained high. The excess N implantation reduced the DAP emission through the formation of nonradiative recombination centers. The combined process of optimal Mg/N implantation and UHPA at 1673 K improved ohmic contacts by increasing Mg concentration and suppressing V(N)s near the surface.

引用

页数：4

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