Optical Properties of GaN Nanowires Grown by MBE on SiC/Si(111) Hybrid Substrate

被引：0

作者：

Shtrom, I. V. ^{[1
,2
,3
]}

Filosofov, N. G. ^{[3
]}

Agekian, V. F. ^{[3
]}

Smirnov, M. B. ^{[3
]}

Serov, A. Yu. ^{[3
]}

Reznik, R. R. ^{[1
,2
,4
]}

Kudryavtsev, K. E. ^{[5
]}

Cirlin, G. E. ^{[1
,2
,4
]}

机构：

[1] St Petersburg Acad Univ, Russian Acad Sci, St Petersburg 194021, Russia

[2] Russian Acad Sci, Inst Analyt Instrumentat, St Petersburg 190103, Russia

[3] St Petersburg State Univ, St Petersburg 199034, Russia

[4] ITMO Univ, St Petersburg 197101, Russia

[5] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603950, Russia

来源：

SEMICONDUCTORS | 2018年 / 52卷 / 05期

关键词：

SILICON-CARBIDE; GALLIUM NITRIDE; PHASE EPITAXY;

D O I：

10.1134/S1063782618050299

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The aim of this work is to demonstrate the fundamental possibility of Si-doped GaN nanowires growth on the buffer layer of silicon carbide on silicon substrate and to investigate the optical characteristics of this structures.

引用

页码：602 / 604

页数：3

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